1、In this paper showed a measurement method of minority carrier lifetime.
2、Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
3、Standard test methods for minority carrier lifetime in bulk germanium and silicon silicon by measurement of photoconductivity decay
4、An experimental method to determine minority carrier generation lifetime from the values of saturation capacitance under two different voltage sweep rates has been presented.
5、This paper presents a new solution of minority carrier continuity equation for a wafer with different surface recombination velocity on its two surfaces.
6、Because of the reflection on the back surface the minority carrier generation and illuminated surface photovoltage of both sides polished wafer will be higher than one of single side polished wafer.
